| List of
Publications (Referred Journals) |
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Authors
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Title
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Journal
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Nimmakayala V V Subbarao, Murali Gedda, Parameswar Krishnan Iyer, and Dipak K. Goswami |
Enhanced environmental stability induced by effective polarization of a polar dielectric layer in tri-layer dielectric system of organic field-effect transistors: a quantitative study |
ACS Appl. Mater.
and Interfaces,
7 (2015) 1915−1924
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Gedda, M., Subbarao, N. N. V. and
Goswami, D. K. |
Local diffusion indeced roughening in cobalt
phthalocyanine thin film growth |
Langmuir,
30 (2014) 8735-8740
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Subbarao, N. N. V., Gedda, M., Suresh, V.,
Iyer, P. K., and Goswami, D. K. |
Effect of thickness of bilayer dielectric on
1,7-dibromo-N, N'-dioctadecyl -3, 4, 9, 10 -perylenetetracarboxylic
diimide based organic field-effect
transistors |
Phy. Status Solidi A
(2014) 1-9, DOI
10.1002/pssa.2014313094 |
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Pal, Arindam, Mahato, J. C., Dev, B. N. and
Goswami, D. K. |
Roughening in electronic growth of Ag on
Si(111)-7x7 surfaces |
ACS Appl. Mater. and Interfaces,
5 (2013) 9517-9521 |
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Gedda, M., Subbarao, N. V. V., Obaidulla,
Sk. Md. and Goswami, D. K. |
High carrier mobility of CoPc wires based
field-effect transistors using bilayer gate
dielectric. |
AIP Advances
3 (2013) 112123 |
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Goswami, D. K. |
Effect of interface structures on the growth of Ag on Si(111) surfaces
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Asian. J. Physics
19 (2010) 215 - 220 |
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Pal, Arindam and Goswami, D.
K. |
Growth of percolated Ag nanostructures
on Si(111)-(7×7) Surfaces |
Int. J. Nanoscience
10 (2011) 123 - 127
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Giri,
P.K., Kumari, S., Goswami, D.K.
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Low energy oxygen implantation induced
improved crystallinity and optical
properties of surface modified ZnO single
crystals
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Appl. Surf. Sci.
256 (2009) 384–388
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Zhang, X.,
Barrena,
E.,
Goswami, D. K., Oteyza,
D. G. de , Weis, C. and Dosch, H.
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Evidence for
layer-dependent Ehrlich-Schwöbel barrier in
organic thin film growth
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Phys. Rev. Lett.
103,
(2009) 136101 - 4
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Weitz, R. T., Amsharov, K., Zschieschang,
U., Barrena, E. V.,
Goswami, D. K., Burghard, M., Dosch, H.,
Jansen, M. and Klauk, H.
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Film morphology, performance and stability
of n-channel organic transistors based on
novel perylene carboxylic diimide
derivatives.
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J. Am. Chem. Soc.
130
(2008) 4637-4645.
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M. Sofos, D. Stone, D.
K. Goswami, J. Okasanski, J. Hua, M. J.
Bedzyk, ad S. Stupp
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Nanoscale Structure of Self-Assembling
Hybrid Materials of Inorganic and
Electronically Active Organic Phases
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J.
Phys. Chem. C
112 (2008) 2881-2887.
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Goswami, D. K., Bhattacharjee, K.,
Satpati, B., Kuri, G., Satyam, P. V., Dev,
B. N.
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Coexistent compressive and
tensile strain in Ag islands on Si (111) –
(7x7) surfaces.
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Appl.
Surf. Sci.
253 (2007) 9142-9147
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Goswami, D. K.,
Bhattacharjee, K., Satpati, B., Roy, S.,
Satyam, P. V. and Dev, B. N.
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Preferential heights on growth of Ag island
on Si(111)-(7x7) surfaces.
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Surf.
Sci.
601 (2007) 603-608.
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Kim, C.-Y., Elam, J. W., Pellin, M.J.,
Goswami, D. K., Cristensen, S. T.,
Hersam, M. C., Stair, P. C. and Bedzyk, M.
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Imaging of atomic layer
deposition (ALD) tungsten monolayer on
a-TiO2(110) by X-ray standing wave Fourier
inversion.
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J.
Phys. Chem. B
110 (2006) 12616-12620.
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Dev, B.N.,
Bera,
S., Satpati, B.,
Goswami, D. K.,
Bhattacharjee, K.,
Satyam, P.V., Yamashita, K., Liedke,
O. M., Potzger, K., Fassbender, J., Eichhorn,
F., Groetzschel, R.
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Nonmagnetic to magnetic nanostructures
via ion irradiation.
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Microelectronic Engineering,
83, (2006) 1721-1725.
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Bera,
S., Satpati, B.,
Goswami, D. K., Bhattacharjee, K.,
Satyam, P. V. and Dev, B. N.:
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Ion-beam induced
transformations in nanoscale multilayers:
Evolution of clusters with preferred length
scales .
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J. Appl.
Phys.
99,
(2006) 074301-5
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Liu, X., Zhang, Y.,
Goswami, D. K., Okasinski, J. S.,
Salaita, K., Sun, P., Bedzyk, M. J., Mirkin,
C. A.
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The
controlled evolution of a polymer single
crystal.
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Science,
307,
(2005) 1763-1766.
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Bhattacharjee, K., Bera,
S.,
Goswami, D. K. and Dev, B. N.
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Nanoscale self-affine surface smoothing
by ion bombardment and the morphology of
nanostructures grown on ion bombarded
surfaces.
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Nucl. Instr. Methd.
B230, (2005) 524–532.
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Goswami, D. K.,
Bhattacharjee, K.
and Dev, B. N.
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Ge growth on ion-irradiated Si surfaces:
Self-affine fractal structure.
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Surf.
Sci.
564,
(2004) 149-155.
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Bera, S.,
Goswami, D. K., Bhattacherjee, K., Dev, B. N., Kuri, G., Nomoto,
K., and Yamashita
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Ion irradiation induced
impurity redistribution in Pt/C multilayers.
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Nucl.
Inst. and Meth. B212, (2003)
530-534.
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Satpati, B.,
Goswami, D. K., Vaishnav, U. D.,
Som, T., Dev, B. N. and Satyam, P. V.
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Energy spike induced
effects in MeV ion-implanted nanoislands.
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Nucl.
Inst. and Meth.
B212, (2003)
157-163.
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Satpati, B.,
Goswami, D. K., Kamila, J., Som, T.,
Dev, B. N. and Satyam, P. V.
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Study of sputtered particles under
thermal spike confinement effects.
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Nucl.
Inst. and Meth.,
B212, (2003)
332-33.
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Kamila, J.,
Satpati, B.,
Goswami, D. K., Rundhe, M., Dev, B. N. and Satyam, P. V.
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Low current MeV Au
ion-induced amorphization in silicon:
Rutherford Backscattering Spectrometry and
Transmission Electron Microscopy study.
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Nucl.
Inst. and Meth.
B207,
(2003) 291-295.
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Satyam, P. V., Kamila,
J., Mahapatra, S., Satpati, B.,
Goswami, D. K, Dev, B. N., Cook, R. E.,
Lahsen Assoufid, Narayanan, S., Wang, J. and
Mishra, N. C.
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Crater formation in gold
nanoislands due to MeV self-ion irradiation.
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J.
Appl. Phys.,
93,
(2003) 6399-6401.
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Goswami, D. K.
and Dev, B.
N.
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Observation of
self-affine fractal roughness in MeV ion
irradiated Si surfaces using scanning
tunneling microscopy.
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Nucl.
Inst. and Meth.
B212, (2003) 253-257.
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Goswami, D. K., Satpati, B., Satyam, P.
V.
and Dev, B. N.:
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Growth of self-assembled
nanostructures by molecular beam epitaxy.
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Current Science,
84, (2003)
903-910.
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Goswami, D. K. and Dev, B. N.
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Nanoscale self-affine surface smoothing
by ion bombardment.
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Phys. Rev. B
68, (2003) 033401-4.
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Pathak, A. P., Nageswara Rao, S. V. S.,
Siddiqui, A. M., Lakshmi, G. B. V. S.,
Srivastava, S. K., Bhattacharya, D., Avasthi,
D. K.,
Goswami, D. K., Satyam, P. V. and Dev,
B. N.:
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Ion beam studies in
strain layer superlattices.
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Nucl.
Inst. and Meth.
B193, (2002) 319-323.
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Ghose, S. K.,
Goswami, D. K., Rout, B., Dev, B. N.,
Kuri, G.
and Materlik, G.
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Ion irradiation induced
mixing, interface broadening and period
dilation in Pt/C multilayers.
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Appl. Phys. Lett.
79, (2001) 467-469.
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